US Patent Issued to Allegro MicroSystems on Dec. 30 for "Magnetoresistance element including a multi-layered free layer stack to tune hysteresis and output amplitude" (British, French Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,510,609, issued on Dec. 30, was assigned to Allegro MicroSystems LLC (Manchester, N.H.).

"Magnetoresistance element including a multi-layered free layer stack to tune hysteresis and output amplitude" was invented by Samridh Jaiswal (London) and Paolo Campiglio (Arcueil, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect of the present disclosure, a magnetic field sensor includes a magnetoresistance (MR) element. In some embodiments, the MR element includes a reference layer, a free layer, and a barrier layer. In some embodiments the free layer includes two or more cobalt iron boron (CoFeB) layers, wherein a first one of the Co...