ALEXANDRIA, Va., June 9 -- United States Patent no. 12,287,381, issued on April 29, was assigned to Allegro MicroSystems LLC (Manchester, N.H.).

"Magnetoresistive sensor element for sensing a two-dimensional magnetic field with low high-field error" was invented by Clarisse Ducruet (Chambery, France), Lea Cuchet (Moirans, France) and Jeffrey Childress (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive element for a two-dimensional magnetic field sensor, including: a ferromagnetic reference layer having a fixed reference magnetization, a ferromagnetic sense layer having a sense magnetization that can be freely oriented relative to the reference magnetization in the presence of...