US Patent Issued to Akoustis on April 29 for "RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer" (New York, North Carolina Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,087, issued on April 29, was assigned to Akoustis Inc. (Huntersville, N.C.).

"RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer" was invented by Jeffrey B. Shealy (Cornelius, N.C.), Mary Winters (Webster, N.Y.) and Craig Moe (Penfield, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric r...