US Patent Issued to AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION on June 17 for "Plasma etching method" (South Korean Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,359, issued on June 17, was assigned to AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION (Suwon-si, South Korea).

"Plasma etching method" was invented by Chang-Koo Kim (Seoul, South Korea), Jun-Hyun Kim (Seongnam-si, South Korea) and Sang-Hyun You (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a plasma etching method. The method includes a first step of vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid pentafluoropropanol (PFP); a second step of supplying a discharge gas containing the vaporized HFE-347mcc3, the vaporized PFP, and argon gas to a plasma chamber in which an etching t...