ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,093, issued on April 15, was assigned to AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION (Suwon-si, South Korea).
"Plasma etching method using pentafluoropropanol" was invented by Chang-Koo Kim (Seoul, South Korea) and Jun-Hyun Kim (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma etching method is disclosed. The plasma etching method comprises: a first step for vaporizing liquid pentafluoropropanol (PFP); a second step for supplying discharge gas comprising the vaporized PFP and argon gas into a plasma chamber in which an object to be etched is placed; and a third step for discharging the discharge gas to gen...