US Patent Issued to AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION on April 15 for "Plasma etching method" (South Korean Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,111, issued on April 15, was assigned to AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION (Suwon-si, South Korea).

"Plasma etching method" was invented by Chang-Koo Kim (Seoul, South Korea), Jun-Hyun Kim (Seongnam-si, South Korea) and Jin-Su Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma etching method includes a first step of supplying a mixed gas containing vaporized heptafluoroisopropyl methyl ether gas having a molecular structure of a following Chemical Formula 1 or vaporized heptafluoropropyl methyl ether gas having a molecular structure of a following Chemical Formula 2 and argon gas into a plasma c...