US Patent Issued to Agency for Science, Technology and Research on Nov. 25 for "Method of growing monolayer transition metal dichalcogenides via sulfurization and subsequent sublimation" (Singaporean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,205, issued on Nov. 25, was assigned to Agency for Science, Technology and Research (Singapore).

"Method of growing monolayer transition metal dichalcogenides via sulfurization and subsequent sublimation" was invented by Henry Medina Silva (Singapore), Dongzhi Chi (Singapore), Shi Wun Tong (Singapore), Jianwei Chai (Singapore) and Shijie Wang (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a transition metal dichalcogenide monolayer, which includes depositing a transition metal, a transition metal oxide, or a mixture thereof, on a substrate, introducing a chalcogen precursor to the transition metal, the transition meta...