US Patent Issued to AGC on May 13 for "Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,298,660, issued on May 13, was assigned to AGC INC. (Tokyo).

"Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method for manufacturing same" was invented by Hirotomo Kawahara (Tokyo), Daijiro Akagi (Tokyo), Hiroaki Iwaoka (Tokyo), Toshiyuki Uno (Tokyo), Michinori Suehara (Tokyo) and Keishi Tsukiyama (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and...