US Patent Issued to AGC on June 24 for "Reflective mask blank for EUV lithography and substrate equipped with conductive film" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,339,580, issued on June 24, was assigned to AGC Inc. (Tokyo).

"Reflective mask blank for EUV lithography and substrate equipped with conductive film" was invented by Yusuke Ono (Fukushima, Japan), Hiroaki Iwaoka (Fukushima, Japan) and Taiga Fudetani (Fukushima, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A reflective mask blank for EUV lithography, includes: a substrate; a conductive film disposed on or above a back surface of the substrate; a reflective layer disposed on or above a front surface of the substrate, the reflective layer reflecting EUV light; and an absorption layer disposed on or above the reflective layer, the absorption layer a...