US Patent Issued to AGC, AGC SI-TECH on Nov. 4 for "Hollow silica particles and method for manufacturing hollow silica particles" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,459,826, issued on Nov. 4, was assigned to AGC Inc. (Tokyo) and AGC SI-TECH Co. LTD. (Kitakyushu, Japan).

"Hollow silica particles and method for manufacturing hollow silica particles" was invented by Toshiya Matsubara (Tokyo), Hyunji Kim (Tokyo), Hajime Katayama (Tokyo) and Yusuke Arai (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention related to a hollow silica particle including: a shell layer containing silica; and a space formed inside the shell layer, in which the hollow silica particle has a particle density as measured by a dry pycnometer density measurement using helium gas of 2.00 g/cm3 or more and a particle density as...