US Patent Issued to ADVANTEST, TOKYO INSTITUTE OF TECHNOLOGY on Nov. 18 for "Fabrication method of stacked device and stacked device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,221, issued on Nov. 18, was assigned to ADVANTEST Corp. (Tokyo) and TOKYO INSTITUTE OF TECHNOLOGY (Tokyo).

"Fabrication method of stacked device and stacked device" was invented by Shinji Sugatani (Saitama, Japan) and Takayuki Ohba (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a stacked device comprising: a plurality of circuit layers each having a circuit portion; an insulating layer configured to cover a plurality of circuit portions included in a part of circuit layers of the plurality of circuit layers, and a plurality of conductive vias provided in the insulating layer and electrically connected to the plurality of circuit p...