ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,795, issued on Nov. 11, was assigned to ADVANCED SEMICONDUCTOR ENGINEERING INC. (Kaohsiung, Taiwan).

"Substrate structure including embedded semiconductor device and method of manufacturing the same" was invented by Chien-Fan Chen (Kaohsiung, Taiwan) and Yu-Ju Liao (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a substrate structure. The substrate structure includes an interconnection structure, a dielectric layer on the interconnection structure, an electronic component embedded in the dielectric layer, and a first conductive via penetrating through the dielectric layer and disposed adjacent to the...