US Patent Issued to ADVANCED SEMICONDUCTOR ENGINEERING on May 27 for "Semiconductor substrate structure and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,797, issued on May 27, was assigned to ADVANCED SEMICONDUCTOR ENGINEERING INC. (Kaohsiung, Taiwan).

"Semiconductor substrate structure and method of manufacturing the same" was invented by Wen Hung Huang (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate structure and a method of manufacturing a semiconductor substrate structure are provided. The semiconductor substrate structure includes a substrate, an electronic device, and a filling material. The substrate defines a cavity. The electronic device is disposed in the cavity and spaced apart from the substrate by a gap. The filling material is disposed in the...