US Patent Issued to Advanced Micro Devices on May 20 for "Cross field effect transistors (XFETs) in integrated circuits" (Colorado Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,370, issued on May 20, was assigned to Advanced Micro Devices Inc. (Santa Clara, Calif.).

"Cross field effect transistors (XFETs) in integrated circuits" was invented by Richard T. Schultz (Ft. Collins, Colo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system and method for creating layout for standard cells are described. In various implementations, a standard cell uses Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The direction of current flow of the top GAA transistor is orthogonal to the direction of current f...