ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,943, issued on Dec. 30, was assigned to Advanced Micro Devices Inc. (Santa Clara, Calif.).

"Apparatuses and systems for offset cross field-effect transistors" was invented by Richard Schultz (Fort Collins, Colo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed integrated circuit for offset cross field effect transistors can include a first transistor include a first channel oriented in a first direction; an oxide layer adjacent to the first transistor; and a second transistor adjacent to the oxide layer. The second transistor can include a second channel that is oriented in a direction orthogonal to the first direction, and the first cha...