ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,046, issued on April 8, was assigned to Advanced Micro Devices Inc. (Santa Clara, Calif.).
"Cross FET SRAM cell layout" was invented by Richard T. Schultz (Ft. Collins, Colo.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A system and method for efficiently creating layout for memory bit cells are described. In various implementations, a memory bit cell uses Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The channels of the vertically stacked transistors use opposite doping polarities. The memory bit cell includes one o...