ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,509,764, issued on Dec. 30, was assigned to ADEKA Corp. (Tokyo).

"Thin-film forming raw material used in atomic layer deposition method, and method of producing thin-film" was invented by Masako Hatase (Tokyo) and Chiaki Mitsui (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1):where R1 represents a secondary alkyl group having 3 to 8 carbon atoms, R2 represents a tertiary alkyl group having 4 to 8 carbon atoms, and R3 represents a hydrogen atom, or a primary, secondary, or te...