US Patent Issued to Adeia Semiconductor Solutions on Sept. 30 for "FinFET gate cut after dummy gate removal" (New York, California Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. RE50,613, issued on Sept. 30, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).

"FinFET gate cut after dummy gate removal" was invented by John R. Sporre (Albany, N.Y.), Siva Kanakasabapathy (Pleasanton, Calif.), Andrew M. Greene (Albany, N.Y.), Jeffrey Shearer (Albany, N.Y.) and Nicole A. Saulnier (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices include a first semiconductor fin. A first gate stack is formed over the first semiconductor fin. Source and drain regions are formed on respective sides of the first gate stack. An interlayer dielectric is formed around the first gate stack. A gate cut plug i...