US Patent Issued to Adeia Semiconductor Solutions on Nov. 25 for "Self-forming barrier for use in air gap formation" (New York Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,704, issued on Nov. 25, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).

"Self-forming barrier for use in air gap formation" was invented by Benjamin D. Briggs (Waterford, N.Y.), Elbert Huang (Carmel, N.Y.), Takeshi Nogami (Schenectady, N.Y.) and Christopher J. Penny (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etch back air gap (EBAG) process is provided. The EBAG process includes forming an initial structure that includes a dielectric layer disposed on a substrate and a liner disposed to line a trench defined in the dielectric layer. The process further includes impregnating a metallic interconnect...