ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,730, issued on June 10, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).

"Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic" was invented by Fee Li Lie (Albany, N.Y.), Dongbing Shao (Wappingers Falls, N.Y.), Robert C. Wong (Poughkeepsie, N.Y.) and Yongan Xu (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "First lithography and etching are carried out on a semiconductor structure to provide a first intermediate semiconductor structure having a first set of surface features corresponding to a first portion of desired fin formation mandrels. Second lithography an...