ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,369, issued on July 29, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).
"FinFET devices" was invented by Veeraraghavan S. Basker (Schenectady, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Theodorus E. Standaert (Clifton Park, N.Y.) and Junli Wang (Slingerlands, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the sem...