ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,379, issued on July 22, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).
"Nanosheet transistor" was invented by Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.), Heng Wu (Guilderland, N.Y.) and Peng Xu (Guilderland, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Inner and outer spacers for nanosheet transistors are formed using techniques that improve junction uniformity. One nanosheet transistor device includes outer spacers and an interlevel dielectric layer liner made from the same material. A second nanosheet transistor device includes outer spacers, inner spacers and an interlevel dielectric layer liner that...