ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,367, issued on July 22, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).
"Bulk nanosheet with dielectric isolation" was invented by Kangguo Cheng (Schenectady, N.Y.), Bruce B. Doris (Slingerlands, N.Y.) and Junli Wang (Slingerlands, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques for dielectric isolation in bulk nanosheet devices are provided. In one aspect, a method of forming a nanosheet device structure with dielectric isolation includes the steps of: optionally implanting at least one dopant into a top portion of a bulk semiconductor wafer, wherein the at least one dopant is configured to increase an oxidation...