US Patent Issued to Adeia Semiconductor Solutions on Jan. 20 for "Method of manufacturing a structure by asymmetrical ion bombardment of a capped underlying layer" (New York Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,682, issued on Jan. 20, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).

"Method of manufacturing a structure by asymmetrical ion bombardment of a capped underlying layer" was invented by Kangguo Cheng (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating semiconductor fins, including, patterning a film stack to produce one or more sacrificial mandrels having sidewalls, exposing the sidewall on one side of the one or more sacrificial mandrels to an ion beam to make the exposed sidewall more susceptible to oxidation, oxidizing the opposite sidewalls of the one or more sacrificial mandrels to fo...