US Patent Issued to Adeia Semiconductor Solutions on Feb. 10 for "Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device" (New York Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,709, issued on Feb. 10, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).

"Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device" was invented by Benjamin David Briggs (Waterford, N.Y.), Lawrence A. Clevenger (Rhinebeck, N.Y.), Bartlet H. Deprospo (Goshen, N.Y.), Huai Huang (Saratoga, N.Y.), Christopher J. Penny (Saratoga Springs, N.Y.) and Michael Rizzolo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on t...