US Patent Issued to Adeia Semiconductor Solutions on Dec. 2 for "Selective gas etching for self-aligned pattern transfer" (New York Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,986, issued on Dec. 2, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).

"Selective gas etching for self-aligned pattern transfer" was invented by John Christopher Arnold (North Chatham, N.Y.), Sean D. Burns (Hopewell Junction, N.Y.), Yann Alain Marcel Mignot (Slingerlands, N.Y.) and Yongan Xu (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can...