ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,403, issued on Aug. 26, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).
"Air gap spacer for metal gates" was invented by Marc A. Bergendahl (Troy, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Fee Li Lie (Albany, N.Y.), Eric R. Miller (Albany, N.Y.), John R. Sporre (Albany, N.Y.) and Sean Teehan (Rensselaer, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structu...