US Patent Issued to Adeia Semiconductor on Nov. 18 for "3D NAND-high aspect ratio strings and channels" (California Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,738, issued on Nov. 18, was assigned to Adeia Semiconductor Inc. (San Jose, Calif.).

"3D NAND-high aspect ratio strings and channels" was invented by Rajesh Katkar (San Jose, Calif.), Xu Chang (San Jose, Calif.) and Belgacem Haba (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure relate to forming a completed stack of layers. Forming the completed stack of layers may include forming a first stack of layers on a first substrate and forming a second stack of layers on a second substrate. The first stack of layers may be bonded to the second stack of layers. The first or second substrate may be removed. Prior to ...