US Patent Issued to Acorn Semi on Nov. 18 for "Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height" (California Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,776, issued on Nov. 18, was assigned to Acorn Semi LLC (Palo Alto, Calif.).

"Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height" was invented by Paul A. Clifton (Palo Alto, Calif.), Andreas Goebel (Mountain View, Calif.) and Walter A. Harrison (Palo Alto, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source regi...