ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,263, issued on June 17, was assigned to Acorn Semi LLC (Palo Alto, Calif.).

"Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers" was invented by Walter A. Harrison (Palo Alto, Calif.), Paul A. Clifton (Palo Alto, Calif.), Andreas Goebel (Palo Alto, Calif.) and R. Stockton Gaines (Santa Monica, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or...