US Patent Issued to Acorn Semi on Aug. 26 for "SOI wafers and devices with buried stressors" (California Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,365, issued on Aug. 26, was assigned to Acorn Semi LLC (Palo Alto, Calif.).

"SOI wafers and devices with buried stressors" was invented by Paul A. Clifton (Palo Alto, Calif.) and Andreas Goebel (Mountain View, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a layer arrangement consisting of, in sequence, a semiconductor-on-insulator layer (SOI) over a buried oxide (BOX) layer over a buried stressor (BS) layer with a silicon bonding layer (BL) intervening between the BOX and the BS layers. The semiconductor structure may be created by forming the BS layer on a substrate of a first wafer; growing the BL layer a...