ALEXANDRIA, Va., June 25 -- United States Patent no. 12,339,335, issued on June 24, was assigned to ACEINNA Transducer Systems Co. Ltd. (Wuxi, China).
"Double pinned MR multilayer film, full bridge MR sensor and manufacturing method therefor" was invented by Dalai Li (Wuxi, China), Zhengwei Huang (Wuxi, China) and Xin Wang (Wuxi, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A double pinned magnetoresistance (MR) multilayer film, a full bridge MR sensor using the double pinned MR multilayer film and a method for manufacturing the full bridge MR sensor are provided in the present invention. The double pinned MR multilayer film comprises: a buffer layer, a first antiferromagnetic layer, a first ferromag...