ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,761, issued on Nov. 18, was assigned to ABLIC Inc. (Nagano, Japan).
"Bipolar transistor and semiconductor device" was invented by Kazuhiro Tsumura (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A bipolar transistor is capable of reducing variations in electrical characteristics. A bipolar transistor 100 includes: a collector region 150 which is a predetermined region in a P-type semiconductor substrate 110; a base region 140 which is formed within the collector region 150 and is an N-type well region; a polysilicon 130 formed on the base region 140 via an insulating film 131 and having an outer periphery, as viewed in a plan view, in a rectan...