US Patent Issued to 2PAI SEMICONDUCTOR (SHANGHAI) on Feb. 3 for "Capacitive isolator and method for manufacturing thereof" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,562, issued on Feb. 3, was assigned to 2PAI SEMICONDUCTOR (SHANGHAI) Co. LTD (Shanghai).

"Capacitive isolator and method for manufacturing thereof" was invented by Zhiwei Dong (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitive isolator is developed. Embodiments of the capacitive isolator include a substrate; a shallow trench isolation region coupled to the substrate; a polysilicon layer disposed above the shallow trench isolation region; a bottom metal plate disposed above the polysilicon layer; one or more lower dielectric layers above the bottom metal plate; an intermediate metal plate disposed above the one or more lower dielect...