US Patent Issued on Sept. 9 for "Semiconductor device having dolmen structure and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,880, issued on Sept. 9.

"Semiconductor device having dolmen structure and method for manufacturing same" was invented by Shintaro Hashimoto (Tokyo), Kouhei Taniguchi (Tokyo), Tatsuya Yahata (Tokyo) and Yoshinobu Ozaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a dolmen structure, includes: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed around the first chip, on the substrate; and a bonding adhesive piece-attached chip supported by the plurality of support pieces and disposed to cover the first chip, in which the bonding adhesive piece-attached chip includes a seco...