ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,829, issued on Sept. 9.
"Method and structure of forming sidewall contact for stacked FET" was invented by Ruilong Xie (Niskayuna, N.Y.), Julien Frougier (Albany, N.Y.), Su Chen Fan (Cohoes, N.Y.), Ravikumar Ramachandran (Pleasantville, N.Y.) and Oleg Gluschenkov (Tannersville, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic structure including a stacked transistor having a lower transistor and an upper transistor. A shared contact in contact with a lower source/drain of the first lower transistor and an upper source/drain of the upper transistor. The shared contact includes a silicide layer, a metal plug layer, and a conducti...