ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,838, issued on Sept. 9.
"Integrated circuit structure with filled recesses" was invented by Kevin L. Lin (Beaverton, Ore.), Nafees A. Kabir (Portland, Ore.), James Munro Blackwell (Portland, Ore.) and Rami Hourani (Beaverton, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are IC structures, packages, and devices that include recesses processed via selective growth. An example integrated circuit (IC) structure, includes a first dielectric material, a second dielectric material on the first dielectric material, and a recess in the second dielectric material, wherein the recess includes a bottom, a top, and sidewalls. The IC furt...