US Patent Issued on Sept. 9 for "Adaptive device data correction with increased memory failure handling" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,731, issued on Sept. 9.

"Adaptive device data correction with increased memory failure handling" was invented by Lei Chen (Shanghai), Liyang Ling (Shanghai), Xiaodong Qiu (Shanghai) and Yong Jiang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of an electronic apparatus may comprise one or more substrates and a controller coupled to the one or more substrates, the controller including circuitry to identify failed memory regions in a memory by a rank, bank, and device associated with the failed memory region, and provide recovery for failed memory regions in three or more banks of a first rank of the memory or three or more d...