ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,404,451, issued on Sept. 2.
"Polysilicon fracture object and production method therefor" was invented by Manato Namekawa (Yamaguchi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A polysilicon fractured product includes fractured pieces including a ridge portion generated by fracturing a polysilicon rod. An average radius of curvature (r) of the fractured pieces is 50 micro metre or more at a tip end of a ridge portion having an angle of 70deg or less. The polysilicon fractured product is obtained by a method including fracturing a polysilicon rod to obtain fractured pieces, and etching at an etching speed of 2.5 micro metre/min or less to achiev...