US Patent Issued on Oct. 7 for "Memory array having an intervening material between adjacent memory blocks with an elongated seam therein" (Idaho Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,076, issued on Oct. 7.

"Memory array having an intervening material between adjacent memory blocks with an elongated seam therein" was invented by Yi Hu (Boise, Idaho), Harsh Narendrakumar Jain (Boise, Idaho) and Matthew J. King (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-...