US Patent Issued on Oct. 28 for "Transistor structure with multiple halo implants having epitaxial layer, high-k dielectric and metal gate" (California Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,795, issued on Oct. 28.

"Transistor structure with multiple halo implants having epitaxial layer, high-k dielectric and metal gate" was invented by Samar K. Saha (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method can include ion implanting with the gate mask to form first halo regions and ion implanting with the gate mask and first spacers as a mask to form second halo regions. The gate mask and first spacers can be removed, and an epitaxial layer formed. A dummy gate mask can be formed. Ion implanting with the dummy gate mask can from source-drain extensions. Second spacers can be formed on sides of the dummy gate mask. Ion i...