US Patent Issued on Oct. 28 for "Method of fabricating thin, crystalline silicon film and thin film transistors" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,619, issued on Oct. 28.

"Method of fabricating thin, crystalline silicon film and thin film transistors" was invented by Ramesh Kumar Harjivan Kakkad (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing a reduced-defect density crystalline silicon film includes forming a Six1Ge1-x1 film on a substrate, forming a Six2Ge1-x2 film on the Six1Ge1-x1 film, forming a silicon film on the Six2Ge1-x2 film, and annealing to crystallize the Six1Ge1-x1, Six2Ge1-x2, and silicon films. The values of x1 and x2 are between zero and one. The Six1Ge1-x1 and Six2Ge1-x2 films are amorphous at formation, having a first thermal budget ...