ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,604, issued on Oct. 14.
"Vapor phase epitaxy method" was invented by Clemens Waechter (Lauffen am Neckar, Germany), Gregor Keller (Heilbronn, Germany), Thorsten Wierzkowski (Heilbronn, Germany) and Daniel Fuhrmann (Heilbronn, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A vapor phase epitaxy method of growing a III-V layer with a doping profile that changes from n-doping to p-doping on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase of an epitaxial gas flow, comprising at least one carrier gas, a first precursor for a first element from main group III and at least one second precursor for a first el...