US Patent Issued on Nov. 4 for "Materials, structures, and methods for optical and electrical III-nitride semiconductor devices" (Minnesota Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,847, issued on Nov. 4.

"Materials, structures, and methods for optical and electrical III-nitride semiconductor devices" was invented by Robbie J. Jorgenson (Minneapolis).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semicon...