ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,051, issued on Nov. 4.
"Integrated structures, capacitors and methods of forming capacitors" was invented by Eric Freeman (Kuna, Idaho) and Paolo Tessariol (Arcore, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include an integrated structure having a semiconductor base and an insulative frame over the semiconductor base. The insulative frame has vertically-spaced sheets of first insulative material, and pillars of second insulative material between the vertically-spaced sheets. The first and second insulative materials are different from one another. Conductive plates are between the vertically-spaced sheets and are directly ...