US Patent Issued on Nov. 25 for "Magnon junction, magnon random access memory, magnon microwave oscillator and detector, electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,506, issued on Nov. 25.

"Magnon junction, magnon random access memory, magnon microwave oscillator and detector, electronic device" was invented by Xiufeng Han (Beijing), Leina Jiang (Beijing), Wenqing He (Beijing) and Tianyi Zhang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a magnon junction, magnon random access memory, microwave oscillator and detector, and electronic device. The magnon junction comprises: a first electrode layer formed by non-magnetic conductive material; a free magnetic layer arranged on the first electrode layer, formed by ferromagnetic conductive material; an antiferromagnetic barrier layer arranged ...