US Patent Issued on Nov. 25 for "DRAM device and ODT resistor value adjustment method and computer program for the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,517, issued on Nov. 25.

"DRAM device and ODT resistor value adjustment method and computer program for the same" was invented by Sang-Seok Kang (Suwon-si, South Korea), Young-Hee Jung (Hwaseong-si, South Korea) and Sun-Young Lee (Anyang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a dynamic random access memory (DRAM) device, an on-die termination (ODT) resistance value setting method thereof, and a computer program therefor, and the DRAM device includes at least one DRAM module and a memory controller configured to measure a resistance value of an ODT resistor corresponding to one of a rank included in the DRAM modul...