ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,632, issued on Nov. 18.
"Temperature-adaptive gate driver for GaN switch" was invented by Syed Asif Eqbal (Bihar, India) and Arnesh Sen (Howrah, India).
According to the abstract* released by the U.S. Patent & Trademark Office: "A temperature-adaptive gate driver for a GaN switch includes a gate-to-source voltage adjustment unit and a driver for outputting an on-state gate-to-source voltage to a gate terminal of the switch. The on-state gate-to-source voltage is adjusted based, in part, on temperature of the switch. The amount of adjustment of the on-state gate-to-source voltage with rise in temperature is based, in part, on high-temperature gate-bias reliability data of the swit...