US Patent Issued on Nov. 11 for "Method for patterning quantum dot layer, method for manufacturing light emitting device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,488, issued on Nov. 11.

"Method for patterning quantum dot layer, method for manufacturing light emitting device" was invented by Wenhai Mei (Beijing), Zhenqi Zhang (Beijing) and Zhihong Wu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of patterning quantum dot layer includes: forming, on a substrate, a film layer including a photosensitive material and quantum dots with ligands on surfaces of the quantum dots; irradiating a quantum dot reserved area with light of a preset wavelength; where under irradiation with light of the preset wavelength, the photosensitive material or a product of the photosensitive material after light irr...