ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,788, issued on May 27.
"Semiconductor substrate and manufacturing method thereof" was invented by Dyi-Chung Hu (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate includes a first structure and a second structure. The first structure includes a circuit layer and a vertical conductive connector. The second structure includes a glass layer and an adhesive layer. The vertical conductive connector is landing on the circuit layer. The glass layer includes a through hole bigger than the vertical conductive connector. The vertical conductive connector of the first structure is assembled in the through hole of th...